SVS60R360FJDE3 Datasheet | Silan Microelectronics

Silan Microelectronics SVS60R360FJH(FJD)(D)(L8A)E3_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 11A, 600V, RDS(on)(typ.)=0.3@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 1 3 1.Gate 2.Drain 3.Source TO-220FJD-3L TO-220FJH-3L 1 3 DFN-4-8x8x0.85-2.0 TO-252-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 600 2.0~4.0 0.36 44 27 Unit V V  A n C ORDERING INFORMATION Part...