SVS60R360L8AE3 Overview
SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
SVS60R360L8AE3 Key Features
- 11A, 600V, RDS(on)(typ.)=0.3@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant