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SVS65R240FJDD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

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Silan Microelectronics

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SVS65R240FJDD4 650V SUPER JUNCTION MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – SVS65R240FJDD4

Datasheet Details

Part number	SVS65R240FJDD4
Manufacturer	Silan Microelectronics
File Size	599.19 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVS65R240FJDD4 Datasheet
Additional preview pages of the SVS65R240FJDD4 datasheet.

Product details

Description

SVS65R240FJD(D)(L8A)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

20A, 650V, RDS(on)(typ. )=0.19@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) DFN-4-8x8x0.85-2.0 123 TO-220-3L 123 TO-220FJD-3L KEY.

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Published: Mar 17, 2025 |