Datasheet Details
| Part number | SVS65R240FJDD4 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 599.19 KB |
| Description | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| Datasheet |
 SVS65R240FJDD4 Datasheet
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General Description
SVS65R240FJD(D)(L8A)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
Key Features
- 20A, 650V, RDS(on)(typ. )=0.19@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability.
- 100% avalanche tested.
- Pb-free lead plating.
- RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) DFN-4-8x8x0.85-2.0 123 TO-220-3L 123 TO-220FJD-3L KEY.