SVS65R240L8AD4 Datasheet | Silan Microelectronics

Silan Microelectronics SVS65R240FJD (D)(L8A)(T)D4_Datasheet 20A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS65R240FJD(D)(L8A)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 20A, 650V, RDS(on)(typ.)=0.19@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 3 1.Gate 2.Drain 3.Source TO-252-2L D(2) G(1) S(3) S(3) S(3) DFN-4-8x8x0.85-2.0 123 TO-220-3L TO-220FJD-3L KEY PERFORMANCE PARAMETERS Characteristics VDS@TJ.max VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 700 2.0~4.0 0.24 80 31 Unit V V  A n C ORDERING INFORMATION Part...