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SVSP35NF65P7D3 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

General Description

SVSP35NF65P7D3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 35A, 650V, RDS(on)(typ. )=85m@VGS=10V.
  • New revolutionary high voltage technology.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-247-3L.

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Datasheet Details

Part number SVSP35NF65P7D3
Manufacturer Silan Microelectronics
File Size 306.07 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP35NF65P7D3 Datasheet

Full PDF Text Transcription (Reference)

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Silan Microelectronics SVSP35NF65P7D3_Datasheet 35A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP35NF65P7D3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  35A, 650V, RDS(on)(typ.)=85m@VGS=10V  New revolutionary high voltage technology  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 123 TO-247-3L ORDERING INFORMATION Part No.