SVSP65R280FJDD4 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP65R280FJD(FJH)(D)(T)D4_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP65R280FJD(FJH)(D)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 14A, 650V, RDS(on)(typ.)=0.24Ω@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 3 1.Gate 2.Drain 3.Source TO-252-2L 3 TO-220-3L 12 3 TO-220FJH-3L TO-220FJD-3L KEY PERFORMANCE PARAMETERS Characteristics VDS@TJ.max VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 700 2.5~4.5 0.28 56 26 Unit V V  A n C ORDERING INFORMATION Part No. SVSP65R280FJDD4 SVSP65R280FJHD4 SVSP65R280DD4TR SVSP65R280TD4 Package...