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SVSP65R050P7HD4 Datasheet 650v Super Junction Mos Power Transistor

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVSP65R050P7HD4_Datasheet 60A, 650V SUPER JUNCTION MOS POWER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

SVSP65R050P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 60A, 650V, RDS(on)(typ. )=42mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 12 3 TO-247-3L KEY.

More Datasheets from Silan Microelectronics

Part Number Description
SVSP65R041P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R080P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R280DD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R280FJDD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R280FJHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R280TD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP60R033P7HD4 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP60R070P7HD4 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP60R090FJDHD4 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP60R090LHD4 600V SUPER JUNCTION MOS POWER TRANSISTOR

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