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SVSP65R041P7HD4 Datasheet 650v Super Junction Mos Power Transistor

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVSP65R041P7HD4_Datasheet 70A, 650V SUPER JUNCTION MOS POWER.

General Description

SVSP65R041P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 70A, 650V, RDS(on)(typ. )=35mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 12 3 TO-247-3L KEY.

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