SVSP65R080P7HD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP65R080P7HD4, a member of the SVSP65R080P7HD4-SilanMicroelectronics 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Product Overview

Silan Microelectronics

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Datasheet Details

Part number	SVSP65R080P7HD4
Manufacturer	Silan Microelectronics
File Size	478.43 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP65R080P7HD4 Datasheet
Additional preview pages of the SVSP65R080P7HD4 datasheet.

SVSP65R080P7HD4 Product details

Description

SVSP65R080P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

43A, 650V, RDS(on)(typ. )=66mΩ@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 12 3 TO-247-3L KEY.

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Published: Mar 19, 2025 |