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SVSP65R080P7HD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVSP65R080P7HD4 datasheet PDF. This datasheet also covers the SVSP65R080P7HD4-SilanMicroelectronics variant, as both devices belong to the same 650v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP65R080P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 43A, 650V, RDS(on)(typ. )=66mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 12 3 TO-247-3L KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP65R080P7HD4-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP65R080P7HD4
Manufacturer Silan Microelectronics
File Size 478.43 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP65R080P7HD4 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVSP65R041P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R050P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R280DD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R280FJDD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R280FJHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP65R080P7HD4_Datasheet 43A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP65R080P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  43A, 650V, RDS(on)(typ.