This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | SVT034R6NT |
|---|---|
| Datasheet | SVT034R6NT SVT034R6ND Datasheet (PDF) |
| File Size | 426.18 KB |
| Manufacturer | Silan Microelectronics |
| Description | 30V N-channel enhancement-mode MOSFET |
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TO-252-2L(SVT034R6ND)热特性 参数 符号 测试条件 芯片对表面热阻，底部 芯片对环境的热阻 焊接温度（SMD） RθJC RθJA Tsold 表 2. 耗散功率值会随着温度变化而变化，当大于25C时耗散功率值随着温度每上升1度减少：0.67W/C(TO-252-2L)； 0.91W/°C(TO-220-3L)； 3. 脉冲测试：脉冲宽度≤300μs，占空比≤2%；.
See all Silan Microelectronics datasheets
| Part Number | Description |
|---|---|
| SVT034R6ND | 30V N-channel enhancement-mode MOSFET |
| SVT034R0NL5 | N-CHANNEL MOSFET |
| SVT03100ND | 30V N-CHANNEL MOSFET |
| SVT03100NL3 | N-CHANNEL MOSFET |
| SVT03110PL3 | P-CHANNEL MOSFET |
| SVT03120NL2 | N-CHANNEL MOSFET |
| SVT03380PSA | P-CHANNEL MOSFET |
| SVT033R5NAT | N-CHANNEL MOSFET |
| SVT033R5NT | N-CHANNEL MOSFET |
| SVT035R5ND | N-CHANNEL MOSFET |
