SVT035R5NL5 Datasheet | Silan Microelectronics

DESCRIPTION The SVT035R5NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURES - 100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability S1 S2 S3 G4 8D 7D 6D 5D PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVT035R5NL5TR Package Marking PDFN-8-5X6X0.95-1.27 035R5NL5 Hazardous Substance Control Halogen free Packing Type Tape&Reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note...