SVT035R5NMJ
DESCRIPTION
The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
FEATURES
- 100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
NOMENCLATURE
1.Gate 2.Drain 3.Source
TO-251J-3L
1 3
TO-252-2L
1 23
TO-220-3L
S V TX X X R X N X
Silan Low voltage trench MOS products
Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V
Package information. Example: T:TO-220; D:TO-
252; MJ:TO-251J;
Channel polarity: N denotes N channel, P denotes P channel
Resistance: R75 denotes 0.7mΩ；7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ
ORDERING INFORMATION
Par...
