SVT035R5NSA Datasheet | Silan Microelectronics

DESCRIPTION SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES 4. Gate 1, 2, 3. Source 5, 6; 7, 8. Drain 12 3 - 21A, 30V, RDS(on)(typ.)= 4.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT035R5NSA SVT035R5NSATR Package SOP-8-225-1.27 SOP-8-225-1.27 Marking 035R5NSA 035R5NSA Hazardous Substance Control Halogen free Halogen free Packing Type Tube Tape&Reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Drain-source Voltage Gate-source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation (TC=25C) -Derate above 25C Single Pulsed...