Datasheet4U Logo Datasheet4U.com

SVT4607SA - N+P-CHANNEL MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – SVT4607SA

Datasheet Details

Part number SVT4607SA
Manufacturer Silan Microelectronics
File Size 434.66 KB
Description N+P-CHANNEL MOSFET
Datasheet download datasheet SVT4607SA Datasheet
Additional preview pages of the SVT4607SA datasheet.

Product details

Description

78 56 SVT4607SA is a N+P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.The improved process and cell structure have been 2 4 especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance.These devices are widely used in UPS, Power Management for Inverter Systems.1 3 1,3. Source 2, 4. Gate 7, 8, 5, 6. Drain

Features

📁 Similar Datasheet

  • SVT10100U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10100UB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT1080XB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT12120U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
Other Datasheets by Silan Microelectronics
Published: |