SGT40T120SDB4P7 Datasheet | Silan

Silan Microelectronics SGT40T120SDB4P7_Datasheet 40A, 1200V FIELD STOP IGBT DESCRIPTION SGT40T120SDB4P7 adopts Silan Field Stop IV IGBT technology, Features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to frequency converters, UPS, and SMPS fields. Features - 40A, 1200V, VCE(sat)(typ.)=1.8V@IC=40A - Ultra low conduction loss - Fast switching - High breakdown voltage - TJmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V...