SGT40U120FD1P7 Datasheet | Silan

Silan Microelectronics SGT40U120FD1P7_Datasheet 40A, 1200V FIELD STOP IGBT DESCRIPTION The SGT40U120FD1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, Features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to industrial welding, UPS, SMPS, and photovoltaic fields. Features - 40A, 1200V, VCE(sat)(typ.)=2.2V@IC=40A - Low conduction loss - Fast switching - High breakdown voltage C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series SGT 40 U120 F D 1 P7 Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop III和IV U : Field Stop IV+ V : Field Stop V W: Field...