SGT40U120FDR1P7
SGT40U120FDR1P7 is 1200V FIELD STOP IGBT manufactured by Silan.
Silan Microelectronics
SGT40U120FDR1P7_Datasheet
40A, 1200V FIELD STOP IGBT
DESCRIPTION
The SGT40U120FDR1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, Features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to industrial welding, UPS, SMPS, and photovoltaic fields.
Features
- 40A, 1200V, VCE(sat)(typ.)=2.2V@IC=40A
- Low conduction loss
- Fast switching
- High breakdown voltage
NOMENCLATURE
C 2
1 G
3 E
12 3
TO-247-3L
SGT 40 U 120 F D R 1 P7
IGBT series
Current, 70: 70A
N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field...