SSM25G45EM - N-channel Insulated-Gate Bipolar Transistor

Silicon Standard

Datasheet Details

Part number	SSM25G45EM
Manufacturer	Silicon Standard
File Size	246.83 KB
Description	N-channel Insulated-Gate Bipolar Transistor
Datasheet	SSM25G45EM Datasheet

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SSM25G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 4.5V gate drive C C C C SO-8 G E E E Absolute Maximum Ratings Symbol Parameter VCE Collector-Emitter Voltage VGE Gate-Emitter Voltage VGEP Pulsed Gate-Emitter Voltage ICP PD @ TC=25°C1 Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range VCE ICP G Rating 450 ±6 ±8 150 2.5 -55 to 150 -55 to 150 450V 150A C E Units V V V A W °C °C Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max.