SSM28G45EM Datasheet | Silicon Standard

N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 3.3V gate drive SO-8 Absolute Maximum Ratings Symbol Parameter VCE Collector-Emitter Voltage VGE Gate-Emitter Voltage VGEP Pulsed Gate-Emitter Voltage ICP PD @ TC=25°C1 Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range VCE ICP Rating 450 ±6 ±8 130 2.5 -55 to 150 -55 to 150 450V 130A Units V V V A W °C °C Electrical Characteristics @ Tj=25o C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units IGES Gate-Emitter Leakage Current VGE=± 6V, VCE=0V - - 10 µA ICES Collector-Emitter Leakage Current (Tj=25°C) VCE=450V, VGE=0V - - 10 µA VCE(sat) Collector-Emitter Saturation Voltage VGE=3.3V, ICP=130A...