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SSM28G45EM - N-channel Insulated-Gate Bipolar Transistor

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Part number SSM28G45EM
Manufacturer Silicon Standard
File Size 248.10 KB
Description N-channel Insulated-Gate Bipolar Transistor
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Full PDF Text Transcription

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SSM28G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 3.3V gate drive C C C C SO-8 G E E E Absolute Maximum Ratings Symbol Parameter VCE Collector-Emitter Voltage VGE Gate-Emitter Voltage VGEP Pulsed Gate-Emitter Voltage ICP PD @ TC=25°C1 Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range VCE ICP G Rating 450 ±6 ±8 130 2.5 -55 to 150 -55 to 150 450V 130A C E Units V V V A W °C °C Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max.
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