SSM4224M Datasheet | Silicon Standard

Description Advanced power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 BV DSS R DS(ON) ID D1 G2 S1 30V 14mΩ 10A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 30 ±20 10 8 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 62.5 Unit °C/W Rev.1.01 4/06/2004 .Silicon Standard. 1 of...