SSM4228GM Datasheet | Silicon Standard

Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 30V 25mΩ 6.8A D1 G1 G2 S1 D2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4228GM. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,4 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Thermal Resistance Junction-ambient Rating 30 ± 25 6.8 5.5 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A A W/°C °C...