SSM4232GM Datasheet | Silicon Standard

DESCRIPTION D2 D2 D1 D1 SO-8 G2 S2 G1 S1 The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID D1 G1 G2 S1 30V 22mΩ 7.8A D2 S2 Pb-free; Ro HS-pliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 30 ±20 7.8 6.2 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 62.5 Unit ℃/W 09/23/2007...