SSM4957GM Datasheet | Silicon Standard

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D1 D2 D1 D2 BV DSS R DS(ON) ID G2 S2 -30V 24mΩ -7.7A SO-8 G1 S1 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for mercial and industrial surface mount applications, and is well suited for low-voltage applications. G1 D1 D2 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM. Absolute Maximum...