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SSM4957GM - Dual P-channel Enhancement-mode Power MOSFETs

Download the SSM4957GM datasheet PDF. This datasheet also covers the SSM4957M variant, as both devices belong to the same dual p-channel enhancement-mode power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (SSM4957M-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM4957GM
Manufacturer Silicon Standard
File Size 219.15 KB
Description Dual P-channel Enhancement-mode Power MOSFETs
Datasheet download datasheet SSM4957GM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D1 D2 D1 D2 BV DSS R DS(ON) ID G2 S2 -30V 24mΩ -7.7A SO-8 G1 S1 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications. G1 D1 D2 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM.