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SST34HF1601B - 16M-bit Concurrent SuperFlash Memory

Datasheet Summary

Description

The SST34HF1601B consists of two memory banks, Bank1 is 256K x16 or 512K x8 and Bank2 is 768K x16 or 1536K x8 which are CMOS concurrent Read/Write flash memories manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology.

Features

  • Organized as 1M x16 or 2M x8.
  • Dual Bank Architecture for Concurrent Read/Write Operation.
  • Bank1: 12 Mbit (768K x16/1536K x8) Flash.
  • Bank2: 4 Mbit (256K x16/512K x8) Flash.
  • Single 2.7-3.3V for Read and Write Operations.
  • Superior Reliability.
  • Endurance: 100,000 cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption:.
  • Active Current: 6 mA typical.
  • Standby Current: 4 µA typica.

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Datasheet preview – SST34HF1601B

Datasheet Details

Part number SST34HF1601B
Manufacturer Silicon Storage Technology
File Size 355.03 KB
Description 16M-bit Concurrent SuperFlash Memory
Datasheet download datasheet SST34HF1601B Datasheet
Additional preview pages of the SST34HF1601B datasheet.

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Full PDF Text Transcription

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16 Mbit (x16/x8) Concurrent SuperFlash Memory SST34HF1601B SST34HF1601B16Mb (x16/x8) Dual-bank CSF memory Preliminary Specifications FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – Bank1: 12 Mbit (768K x16/1536K x8) Flash – Bank2: 4 Mbit (256K x16/512K x8) Flash • Single 2.7-3.
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