SST34HF1601B Description
The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST34HF1601B writes (Program or Erase) with a 2.7-3.3V power supply. The SST34HF1601B device conforms to JEDEC standard pin assignments for x16/x8 memories.
SST34HF1601B Key Features
- Organized as 1M x16 or 2M x8
- Dual Bank Architecture for Concurrent Read/Write Operation
- Bank1: 12 Mbit (768K x16/1536K x8) Flash
- Bank2: 4 Mbit (256K x16/512K x8) Flash
- Single 2.7-3.3V for Read and Write Operations
- Superior Reliability
- Endurance: 100,000 cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption
- Active Current: 6 mA typical