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SST34HF3243B Datasheet (SST34HF3223B / SST34HF3243B) 32M-bit Concurrent SuperFlash + SRAM Combo Memory

Manufacturer: Silicon Storage Technology

Download the SST34HF3243B datasheet PDF. This datasheet also includes the SST34HF3223B variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SST34HF3223B_SiliconStorageTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SST34HF3243B
Manufacturer Silicon Storage Technology
File Size 383.67 KB
Description (SST34HF3223B / SST34HF3243B) 32M-bit Concurrent SuperFlash + SRAM Combo Memory
Download SST34HF3243B Download (PDF)

General Description

The SST34HF3223B/3243B ComboMemory devices integrate four CMOS flash memory banks with a 256K x8 / 128K x16 or 512K x8 / 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP).

These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches.

The SST34HF3223B/3243B devices are ideal for applications such as cellular phones, PDAs and other portable electronic devices in a low power and small form factor system.

Overview

32 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF3223B / SST34HF3243B SST34HF3223B / SST24HF3243B32 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemories Preliminary.

Key Features

  • Flash Organization: Two 1M x16.
  • Quad-Bank Architecture for Concurrent Read-While-Write Operation.
  • 12 Mbit + 4 Mbit + 12 Mbit + 4 Mbit.
  • SRAM Organization:.
  • 2 Mbit: 256K x8 or 128K x16.
  • 4 Mbit: 512K x8 or 256K x16.
  • Single 2.7-3.3V Read-While-Write Operations.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption:.
  • Active Cur.