SST34HF3243B Overview
These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF3223B/3243B devices are ideal for applications such as cellular phones, PDAs and other portable electronic devices in a low power and small form...
SST34HF3243B Key Features
- Flash Organization: Two 1M x16
- Quad-Bank Architecture for Concurrent Read-While-Write Operation
- 12 Mbit + 4 Mbit + 12 Mbit + 4 Mbit
- SRAM Organization
- 2 Mbit: 256K x8 or 128K x16
- 4 Mbit: 512K x8 or 256K x16
- Single 2.7-3.3V Read-While-Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention