SST34HF324G Description
The SST34HF324G boMemory devices integrate a 2M x16 CMOS flash memory bank with 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF324G...
SST34HF324G Key Features
- Flash Organization: 2M x16
- 32 Mbit: 24Mbit + 8Mbit
- Concurrent Operation
- Read from or Write to SRAM while Erase/Program Flash
- SRAM Organization
- 4 Mbit: 256K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention