SST34HF3244C Description
The SST34HF3244C boMemory device integrates either a 2M x16 or 4M x8 CMOS flash memory bank with a 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches....
SST34HF3244C Key Features
- Flash Organization: 2M x16 or 4M x8
- Dual-Bank Architecture for Concurrent Read/Write Operation
- 32 Mbit Top Sector Protection
- 8 Mbit + 24 Mbit
- SRAM Organization
- 4 Mbit: 256K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention