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TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V(BR)DSS Min (V) 200
rDS(on) Max (W) 11
VGS(th) (V) 0.8 to 3.0
ID (A) 0.12
Features
D Low On-Resistance: 9.5 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability
Benefits
D Low Offset Voltage D Full-Voltage Operation D Easily Driven Without Buffer D Low Error Voltage D No High-Temperature
“Run-Away”
Applications
D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
TN2010T Datasheet
