VN2406D - N-Channel Enhancement-Mode MOS Transistors

Siliconix

Download the VN2406D datasheet PDF. This datasheet also covers the VN2406B variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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VN2406D n-channel enhancement-mode mos transistors by Siliconix - Datasheet Preview — Note: The manufacturer provides a single datasheet file (VN2406B-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	VN2406D
Manufacturer	Siliconix
File Size	98.47 KB
Description	N-Channel Enhancement-Mode MOS Transistors
Datasheet	VN2406D Datasheet

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Other Datasheets by Siliconix

Part Number	Description
VN2406B	N-Channel Enhancement-Mode MOS Transistors
VN2406L	N-Channel Enhancement-Mode MOS Transistors
VN2406M	N-Channel Enhancement-Mode MOS Transistors
VN2010L	N-Channel Enhancement-Mode MOS Transistors
VN2020L	N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.:r-Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN2406B 240 6 0.63 TO-205AD VN2406D 240 6 1.12 TO-220 Performance Curves: VNDB24 (See Section 7) VN2406B, VN2406D N-Channel Enhancement-Mode MOS Transistors TO-20SAD (TO-39) BOTTOM VIEW TO-220 1 SOURCE 2 GATE 3 DRAIN & CASE FRONT VIEW o 1 GATE 2 & TAB - DRAIN 3 SOURCE 123 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS .':' SYMBOL VN2406B VN2406D UNITS Drain-Source Voltage Gate-Source Voltag~ Vos 240 VGS ±20 240 V ±30 Continuous Drain Current Pulsed Drain Current 1 Power Dissipation Tc= 25DC 10 Tc = 100DC 10M Tc= 25DC Po Tc = 100DC 0.63 0.4 3 6.25 2.5 1.12 0.