VN2406M - N-Channel Enhancement-Mode MOS Transistors

Siliconix

Download the VN2406M datasheet PDF. This datasheet also covers the VN2406L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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VN2406M n-channel enhancement-mode mos transistors by Siliconix - Datasheet Preview — Note: The manufacturer provides a single datasheet file (VN2406L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	VN2406M
Manufacturer	Siliconix
File Size	94.59 KB
Description	N-Channel Enhancement-Mode MOS Transistors
Datasheet	VN2406M Datasheet

📁 Similar Datasheet

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Other Datasheets by Siliconix

Part Number	Description
VN2406B	N-Channel Enhancement-Mode MOS Transistors
VN2406D	N-Channel Enhancement-Mode MOS Transistors
VN2406L	N-Channel Enhancement-Mode MOS Transistors
VN2010L	N-Channel Enhancement-Mode MOS Transistors
VN2020L	N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ICrSiliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (fl) (A) PACKAGE VN2406L 240 6 0.22 TO-92 VN2406M 240 6 0.25 TO-237 Performance Curves: VNDB24 (See Section 7) VN2406L, VN2406M N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Vos Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25DC T A = 100DC Power Dissipation TA= 25DC TA = 100DC Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS 10 10M Po Tj. Tstg h VN2406L VN2406M 240 240 ±30 0.17 ±30 0.19 0.11 0.12 1.