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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN2406L/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2 GATE
VN2406L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C Derate above 25°C
VDSS
240
Vdc
VDGR
60
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
ID
200
mAdc
IDM
500
mAdc
PD
350
mW
2.8
mW/°C
Operating and Storage Temperature
TJ, Tstg
—
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds
RθJA TL
312.
VN2406L Datasheet
