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VN2406L - TMOS FET Transistor

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Datasheet Details

Part number VN2406L
Manufacturer Motorola Inc
File Size 55.10 KB
Description TMOS FET Transistor
Datasheet download datasheet VN2406L Datasheet
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN2406L/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE VN2406L Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C VDSS 240 Vdc VDGR 60 Vdc VGS ± 20 Vdc VGSM ± 40 Vpk ID 200 mAdc IDM 500 mAdc PD 350 mW 2.8 mW/°C Operating and Storage Temperature TJ, Tstg — °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds RθJA TL 312.
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