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ICrSiliconix
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PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fl)
(A)
PACKAGE
VN2406L
240
6
0.22
TO-92
VN2406M 240
6
0.25 TO-237
Performance Curves: VNDB24 (See Section 7)
VN2406L, VN2406M
N-Channel Enhancement-Mode MOS Transistors
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
TO-237
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Vos
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25DC T A = 100DC
Power Dissipation
TA= 25DC TA = 100DC
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGS 10 10M Po Tj. Tstg
h
VN2406L
VN2406M
240
240
±30 0.17
±30 0.19
0.11
0.12
1.
VN2406L Datasheet
