SSF3960J7-HF Datasheet | Silikron Semiconductor

Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature PPAK5- 6-8L        Schematic diagram  Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy ② Avalanche Current @ L=0.3m H② Operating Junction and Storage Temperature Range Max. 130 100 327 90 30 ± 20 152 55 -55 to + 150 Units W V V m J A °C ©Silikron Semiconductor CO., LTD. 2014.10.14 .silikron.  Version: 1.0 page 1 of 7 SSF3960J7-HF                                                                                                          Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s)④ Typ. - - Max. 2 50 Units ℃/W ℃/W Electrical Characterizes@TA=25℃unless otherwise specified Symbol V(BR)DSS RDS(on) RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown...