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SSF3960J7-HF - MOSFET

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet preview – SSF3960J7-HF

Datasheet Details

Part number SSF3960J7-HF
Manufacturer Silikron Semiconductor
File Size 545.39 KB
Description MOSFET
Datasheet download datasheet SSF3960J7-HF Datasheet
Additional preview pages of the SSF3960J7-HF datasheet.

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Full PDF Text Transcription

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SSF3960J7-HF                                                                                                      Main Product Characteristics: VDSS 30V RDS(on) 1.9mΩ (typ.) ID 130A Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature PPAK5*6-8L        Schematic diagram  Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
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