SSTS20120 Overview
Description
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM VR(RMS) IF(AV) Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 120 84 20 200 2 -55~150 -55~150 Unit V V A A A ℃ ℃ Symbol Characterizes RθJC RθJC Maximum TO220 TO220F Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 120 V 0.7 VF Forward Voltage Drop 0.9 V 0.8 IR Leakage Current 0.2 20 mA Value 2 4 Unit ℃/W ℃/W Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ VR=120V, TJ=25℃ VR=120V, TJ=125℃ ©Silikron Semiconductor CO., LTD. 2012.2.17 Version: 1.0 page 1of6 SSTS20120/SSTS20120F I-V Curves: Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD.
Key Features
- High Junction Temperature
- High ESD Protection
- High Forward & Reverse Surge capability TO220 SSTS20120 TO220F SSTS20120F
