SSTS20120F Datasheet | Silikron Semiconductor

Features and Benefits: - High Junction Temperature - High ESD Protection - High Forward & Reverse Surge capability TO220 SSTS20120 TO220F SSTS20120F Schematic Diagram Description : Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM VR(RMS) IF(AV) Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 120 84 20 200 2 -55~150 -55~150 Unit V V A A A ℃ ℃ Thermal Resistance Symbol Characterizes RθJC RθJC Maximum Thermal Resistance Junction To Case(per leg) TO220 TO220F Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit Reverse Breakdown Voltage V 0.7 VF Forward Voltage Drop 0.9 V 0.8 IR Leakage Current 0.2 20 m...