SSTS20U60P5 Datasheet | Silikron Semiconductor

Features and Benefits: - High Junction Temperature - High ESD Protection - High Forward & Reverse Surge capability TO-277 SSTS20U60P5-HF Schematic Diagram Description : Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM VR(RMS) IF(AV) Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 60 42 20 200 0.5 -55~150 -55~150 Unit V V A A A ℃ ℃ Thermal Resistance Symbol Characterizes RθJA Maximum Thermal Resistance Junction To Ambient Value 73 Unit ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 60 0.33 0.35 VF Forward Voltage Drop 0.5 0.55 0.21 IR Leakage Current 0.1 0.2 m A 30...