Datasheet Details
| Part number | SSTS30100CT |
|---|---|
| Manufacturer | Silikron Semiconductor |
| File Size | 383.64 KB |
| Description | Schottky Barrier Rectifier |
| Datasheet | SSTS30100CT-SilikronSemiconductor.pdf |
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Overview: Main Product Characteristics: IF 2×15A VRRM 100V Tj(max) 150℃ Vf(typ) 0.
| Part number | SSTS30100CT |
|---|---|
| Manufacturer | Silikron Semiconductor |
| File Size | 383.64 KB |
| Description | Schottky Barrier Rectifier |
| Datasheet | SSTS30100CT-SilikronSemiconductor.pdf |
|
|
|
: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors;
this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes Value Unit VRRM Peak Repetitive Reverse Voltage 100 V VR(RMS) RMS Reverse Voltage 70 V IF(AV) Average Forward Current Per diode Per device 15 A 30 A IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 200 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Thermal Resistance 0.5 -55~150 -55~150 A ℃ ℃ Symbol Characterizes Value Unit RθJC RθJC Maximum Thermal Resistance Junction To Case(per leg) TO220 TO220F 2.3 ℃/W 5.3 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit Test Condition VR Reverse Breakdown Voltage 100 V IR=0.5mA 0.5 V IF=5A, TJ=25℃ 0.55 V IF=7.5A, TJ=25℃ 0.61 V IF=10A, TJ=25℃ VF Forward Voltage Drop 0.7 0.8 0.45 V IF=15A, TJ=25℃ V IF=5A, TJ=125℃ 0.52 V IF=7.5A, TJ=125℃ 0.57 V IF=10A, TJ=125℃ 0.64 0.7 V IF=15A, TJ=125℃ IR Leakage Current 0.1 20 mA VR=100V, TJ=25℃ VR=100V, TJ=125℃ ©Silikron Semiconductor CO., LTD.
2013.4.23 .silikron.
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|---|---|
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