SMG120N80E1
SMG120N80E1 is IGBT manufactured by Silikron.
Main Product Characteristics:
VCES
1200V
80A
VCE(sat)
1.7V
GC E
Features and Benefits:
- Trench FS technology offering
- High speed switching
- Low gate charge and VCE(sat)
- High ruggedness, temperature stable behavior
- Maximum junction temperature 175°C
- 247
Applications:
- Solar Inverters
- Uninterruptible power supplies
- Motor drives
- Air condition
Schematic Diagram
Absolute Max Rating:
Symbol VCES VGES
ICpuls IF IFM
TJ TSTG TL
Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current，tp limited by Tjmax Turn off safe operating area，VCE=1200V，TJ=175°C Diode Continuous...
