SMG120N80EPD
SMG120N80EPD is IGBT manufactured by Silikron.
Main Product Characteristics:
VCES
1250V
80A
VCE(sat)
1.75V
GCE TO
- 247Plus-3L
Features and Benefits:
- Trench FS technology offering
- High speed switching
- Low gate charge and VCE(sat)
- High ruggedness, temperature stable behavior
- Maximum junction temperature 175°C
Applications:
- Solar inverters
- Uninterruptible power supplies
- Motor drives
- Air condition
Schematic Diagram
Absolute Max Rating:
Symbol VCES VGES
ICpuls
- IF
IFM PD TJ TSTG TL
Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current，tp limited by Tjmax Turn off safe operating area，VCE=650V，TJ=175°C Diode...
