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SMG120N80EPD - IGBT

Key Features

  • Trench FS technology offering.
  • High speed switching.
  • Low gate charge and VCE(sat).
  • High ruggedness, temperature stable behavior.
  • Maximum junction temperature 175°C.

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Datasheet Details

Part number SMG120N80EPD
Manufacturer Silikron
File Size 630.25 KB
Description IGBT
Datasheet download datasheet SMG120N80EPD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics: VCES 1250V IC 80A VCE(sat) 1.