SMS006N05J7
SMS006N05J7 is MOSFET manufactured by Silikron.
Main Product Characteristics:
VDSS
60V
RDS(on) 4.7mΩ (typ.)
88A
PDFN5x6-8L
Features and Benefits:
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. 88 55 352 78 60 ± 20
-55 to +150
Units
W V V °C
©Silikron Microelectronics (Suzhou) Co.,Ltd
.silikron. Version: Preliminary page 1 of 5
Thermal Resistance
Symbol RθJC
Characterizes Junction-to-case ③
Typ.
- Max....
