SMS006N05J8
SMS006N05J8 is MOSFET manufactured by Silikron.
Main Product Characteristics:
VDSS
60V
RDS(on) 4.8mΩ(typ.)
60A
PDFN 3- 3-8L
Features and Benefits:
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. 60 240 78 60 ± 20
-55 to +150
Units
W V V °C
©Silikron Microelectronics (Suzhou) Co.,Ltd
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Version : Preliminary page 1 of 5
Thermal Resistance
Symbol RθJC
Characterizes Junction-to-case③
Typ....
