SSF2437E Datasheet | Silikron

Main Product Characteristics: VDSS RDS(on) -20V 38mΩ (typ.) -5.5A ① SOT-23-6 Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: @TA=25℃ unless otherwise specified Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power...