SII50N06 Datasheet | Sirectifier Semiconductors

NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. TC = 25o C, unless otherwise specified Conditions Values 600 75(50) 100 280 _ +20 600 50 100 450 2500 Absolute Maximum Ratings Symbol Units V A A W V IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(80)o C, Tvj= 150o C ICRM TC= 80o C, t P =1ms Ptot TC= 25o C, Tvj= 150o C VGES Diode Wechselrichter/ Diode Inverter VRRM IF IFRM t P =1ms VR=0V, t P =10ms; TVj=125o C I2t Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate As Sirectifier NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.0m A ICES VGE = 0; VCE = 600V, Tj = 25(125)o C IGES VCE=0; VGE=20V VCE(sat) Cies Cres IC =300A; VGE = 15V; Tj = 25(125)o C under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25o C, unless otherwise specified min. 4.5 typ. 5.5 1(1000) 2.1(2.4) 2.2 0.2 40 225 max. 6.5 500 400 2.6(2.9) Units V u A n A V n F n H A LCE o .. Isc t P 10u S, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 50A tr RGon = RGoff =2.7 , , Tj = 25(125)o C td(off) VGE = ± 15V tf 40(42) 9(10) 120(130) 12(21) 0.5(1.0) 1.2 0.44 ns ns ns ns m J m K/W Eon(Eoff) RCC'+EE' Tj = 25(125)o C, LS = 35n H Rth JC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 50A; VGE = 0V; Tj = 25(125)o C IRM IF = 50A; Tj = 25(125)o C Qr -di/dt = 2900A/us Erec VGE = -10V, VR=300V Rth JC Rth CK TVJ TVJM Tstg 1.25(1.2) 88(92) 3.4(5.6) -(1.5) 0.03 -40...+125 150 -40...+125 1.6(-) V A u C m J K/W o Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 3 2.5 5 5 160 Nm Nm g Sirectifier NPT IGBT Modules .. Sirectifier NPT IGBT...