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SII50N12 - NPT IGBT Modules

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Part number SII50N12
Manufacturer Sirectifier Semiconductors
File Size 768.51 KB
Description NPT IGBT Modules
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SII50N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise specified Conditions Values 1200 78(50) 156(100) _ +20 400 _ 40...+125(150) 2500 _ < 0.3 o Units V A A V W C TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min V K/W _ 0.6 < Sirectifier R SII50N12 NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =2mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =50A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres www.DataSheet4U.
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