SII50N12 Datasheet | Sirectifier Semiconductors

NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Rth JC Rth JCD o TC = 25o C, unless otherwise specified Conditions Values 1200 78(50) 156(100) _ +20 400 _ 40...+125(150) 2500 _ < 0.3 o Units V A A V TC= 25(80) C TC= 25(80)o C, t P =1ms _ Tstg TOPERATION < AC, 1min K/W _ 0.6 < Sirectifier NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =2m A ICES VGE = 0; VCE = 1200V; Tj = 25(125)o C IGES VGE = 20V, VCE = 0 VCE(sat) IC =50A; VGE = 15V; Tj = 25(125)o C; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres .. gfs VCE=20V, IC=50A Switching Characteristics td(on) VCC = 600V, IC = 50A tr RGon = RGoff =22 , Tj = 125o C td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 50A, VGE = 0V, Tj = 25(125)o C trr IF=50A, VR= _ 600V, VGE=0V,di/dt=_ 800A/us, Tj = 125o C _ IF = 50A, VGE = 0V, VR= 600V Qrr _ di/dt= 800A/us, Tj = 25(125)o C Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25o C, unless otherwise specified min. 4.5 typ. 5.5 0.8(3.5) 2.5(3.1) 3.3 0.5 0.25 23 max. 6.5 1 200 3(3.7) Units V m A n A V n F S 44 56 380 70 2.3(1.8) 0.2 2.8(8) 100 100 500 100 2.8 ns V us u C Mechanical Data 5 5 160 Nm Nm g Sirectifier NPT IGBT Modules Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 450 W Ptot 350 300 100 µs Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 A t = 14.0µs p 10 2 .. 200 150 10 1 1 ms 10 0 100 50 0 0 20 40 60 80 100 120 °C 160 10 -1 0 10...