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SUR6030PT Datasheet (sur6020pt - Sur6060pt) Ultra Fast Recovery Epitaxial Diodes

Manufacturer: Sirectifier Semiconductors

Overview: SUR6020PT thru SUR6060PT Ultra Fast Recovery Epitaxial Diodes A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 .. A=Anode, C=Cathode, TAB=Cathode SUR6020PT SUR6030PT SUR6040PT SUR6060PT Symbol IFRMS IFAVM IFRM VRSM V 200 300 400 600 VRRM V 200 300 400 600 Test Conditions J K L M N Maximum Ratings 70 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 Unit A TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 125 0.8...1.2 6 W Nm g SUR6020PT thru SUR6060PT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=37A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 35 Unit uA uA mA V V m K/W IR VF .. VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=350V; IF=30A; -diF/dt=240A/us; L<0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number SUR6030PT
Manufacturer Sirectifier Semiconductors
File Size 297.14 KB
Description (SUR6020PT - SUR6060PT) Ultra Fast Recovery Epitaxial Diodes
Datasheet SUR6030PT SUR6020PT Datasheet (PDF)

Key Features

  • International standard package JEDEC TO-247AD.
  • Planar passivatd chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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