SUR6060PT Datasheet | Sirectifier Semiconductors

SUR6020PT thru SUR6060PT Ultra Fast Recovery Epitaxial Diodes A C(TAB) A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 .. A=Anode, C=Cathode, TAB=Cathode SUR6020PT SUR6030PT SUR6040PT SUR6060PT Symbol IFRMS IFAVM IFRM VRSM V 200 300 400 600 VRRM V 200 300 400 600 Test Conditions J K L M N Maximum Ratings 70 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 Unit A TVJ=TVJM TC=85o C; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45o C t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine IFSM TVJ=150o C TVJ=45o C I2t TVJ=150o C A2s TVJ TVJM Tstg Ptot Md Weight TC=25o C Mounting torque o 125 0 1.2 6 W Nm g SUR6020PT thru SUR6060PT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25o C; VR=VRRM TVJ=25o C; VR=0.8.VRRM TVJ=125o C; VR=0.8.VRRM IF=37A; TVJ=150o C TVJ=25o C For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 35 Unit u A u A m A V V m...