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SLD-1000 - 4 Watt Discrete LDMOS FET

General Description

Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz.

It is an excellent solution for applications requiring high linearity and efficiency.

Key Features

  • 4 Watt Output P1dB Single Polarity Operation 19dB Gain at 900 MHz XeMOS IITM LDMOS Integrated ESD Protection, Class 1B Aluminum Topside Metallization Gold Backside Metallization Gate Manifold Drain Manifold Source - Backside Contact RF Specifications Symbol Frequency Gain Efficiency Linearity RTH Parameter Frequency of Operation 3.5 Watts CW, 900 MHz Drain Efficiency at 3.5 Watts CW, 900 MHz.

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Datasheet Details

Part number SLD-1000
Manufacturer Sirenza Microdevices
File Size 334.99 KB
Description 4 Watt Discrete LDMOS FET
Datasheet download datasheet SLD-1000 Datasheet

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Product Description Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for power amplifier, or transmitter applications. These robust power transistors are fabricated using Sirenza’s high performance XEMOS IITM process.