SLD-3091FZ Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-3091FZ is typically used in power amplifiers, repeaters, and radio amplifier applications. The power transistor is fabricated using Sirenza’s high performance Xe MOS IITM process. Pb Ro HS pliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Functional Schematic Diagram Product Features ESD Protection - - - - - - 30 Watt Output P1d B Single Polarity Supply Voltage High Gain: 18 d B at 915 MHz High Efficiency: 45% at 30W CW Xe MOS II LDMOS Integrated ESD Protection, 1B Applications Case Flange = Ground Key RF Specifications Symbol Frequency Gain Efficiency IRL Linearity RTH Parameter Frequency of Operation 30 Watt CW, 915 MHz Drain Efficiency at 30 Watt CW, 915 MHz - - - - - Base Station PA driver Repeaters Radio Amplifier Military munication GSM, CDMA, RFID, Point-to-Point Units MHz d B % d B d Bc Watt ºC/W Min. 10 Typ. 19 45 -15 -28 35 2.4 Max. 2200 Input Return Loss, 30 Watt Output Power, 915 MHz 3rd Order IMD at 30 Watt PEP (Two Tone), 915 MHz 1d B pression (P1d B), 915 MHz Thermal Resistance (Junction-to-Case) Test Conditions VDS = 28.0V, IDQ = 300m A, TFlange = 25ºC Key DC Parameters Symbol gm VGSThreshold VDS Breakdown Ciss Crss Coss RDSon Parameter Forward Transconductance @ 425m A IDS IDS=3m A 1m A IDS current Input Capacitance (Gate to Source) VGS=0V, VDS=28V Reverse Capacitance (Gate to Drain) VGS=0V, VDS=28V Output Capacitance (Drain to Source) VGS=0V, VDS=28V Drain to Source Resistance, VGS=10V, VDS=250m V Unit m A / V Volt Volt p F p F p F Ω Min Typ. 1650 3.3 65 66 1.4 30 0.2 Max The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for...