SLD-2083CZ Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-2083CZ is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applications. The power transistor is fabricated using Sirenza’s high performance Xe MOS IITM process. Pb Ro HS pliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Functional Schematic Diagram Product Features ESD Protection - - - - - - 12 Watt Output P1d B Single Polarity Supply Voltage High Gain: 18 d B at 915 MHz High Efficiency: 47% at 10W CW Xe MOS II LDMOS Integrated ESD Protection, Class 1B Applications Case Flange = Ground RF Specifications Symbol Frequency Gain Efficiency IRL Parameter Frequency of Operation 10 Watt CW, 902 - 928MHz Drain Efficiency at 10 Watt CW, 915MHz - - - - - Base Station PA driver Repeaters RFID Military munication GSM/CDMA Unit MHz d B % d B d Bc Watt Watt Watt ºC/W Min 10 17 40 Typ 18 47 -15 -28 12 1.6 3.6 4 Max 2700 -10 -26 - Input Return Loss, 10 Watt Output Power, 915MHz 3rd Order IMD at 10 Watt PEP (Two Tone), 915MHz 1d B pression (P1d B), 915MHz Linearity IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-55d B IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-45d B Thermal Resistance (Junction-to-Case) Test Conditions VDS = 28.0V, IDQ = 125m A, TFlange = 25ºC DC Specifications Symbol gm VGSThreshold VDS Breakdown Ciss Crss Coss RDSon Parameter Forward Transconductance @ 125m A IDS IDS=3m A 1m A IDS current Input Capacitance (Gate to Source) VGS=0V, VDS=28V Reverse Capacitance (Gate to Drain) VGS=0V, VDS=28V Output Capacitance (Drain to Source) VGS=0V, VDS=28V Drain to Source Resistance, VGS=10V, VDS=250m V Unit m A / V Volt Volt p F p F p F Ω Min Typical 590 3.8 65 27.5 0.81 14.65 0.6 Max The information provided herein is believed to be...