• Part: DAN217
  • Description: Switching Diodes
  • Category: Diode
  • Manufacturer: Slkor Micro Semicon
  • Size: 1.60 MB
Download DAN217 Datasheet PDF
Slkor Micro Semicon
DAN217
Features - Ultra high speed switching - High reliability 2 1.Base 2.Emitter 3.Collector - Simplified outline(SOT-23) - Absolute Maximum Ratings Ta = 25℃ Parameter Reverse Voltage Reverse Voltage (DC) Average rectified forward current (Single) Forward Current (Single) Surge current (t=1us) Power Dissipation Junction Temperature Storage Temperature range Symbol VRM VR Io IFM Isurge Pd TJ Tstg Rating 80 80 100 300 4 200 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Capacitance between terminals Reverse recovery time Symbol Test Conditions VR IR= 100 u A VF IF= 100 m A VR= 70 V Ct VR= 6 V, f= 1 MHz trr VR=6V,IF=5m A, RL=50Ω Unit V m A A m W ℃ Min Typ Max Unit 80 V 1.2 0.1 u A 3.5 p F 4 ns .slkormicro. Rev.1 -- 11 May 2018 FORWARD CURRENT:IF(m A) FORWARD VOLTAGE:VF(m V) CAPACITANCE BETWEEN TERMINALS:Ct(p F) REVERSE CURRENT:IR(n A) - Typical Characterisitics...